? semiconductor components industries, llc, 1994 october, 2016 ? rev. 13 1 publication order number: mmbt3904lt1/d mmbt3904l, smmbt3904l general purpose transistor npn silicon features ? these devices are pb?free, halogen free/bfr free and are rohs compliant ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable maximum ratings rating symbol value unit collector ?emitter voltage v ceo 40 vdc collector ?base voltage v cbo 60 vdc emitter ?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc collector current ? peak (note 3) i cm 900 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. reference soa curve. collector 3 1 base 2 emitter ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. sot?23 (to?236) case 318 style 6 marking diagram 1am = specific device code m = date code* = pb?free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) 1 2 1 3 1am m device package shipping ? ordering information mmbt3904lt3g SMMBT3904LT3G sot?23 (pb?free) mmbt3904lt1g smmbt3904lt1g sot?23 (pb?free) 3000 / tape & reel 10,000 / tape & reel www. onsemi.com
mmbt3904l, smmbt3904l www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl ? 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex ? 50 nadc on characteristics (note 4) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 ? ? 300 ? ? ? collector ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? 0.2 0.3 vdc base ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 ? 0.85 0.95 vdc small? signal characteristics current ?gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 300 ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 8.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 1.0 10 k voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.5 8.0 x 10 ?4 small ?signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 400 ? output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 1.0 40 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k ohms, f = 1.0 khz) nf ? 5.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc, i c = 10 madc, i b1 = 1.0 madc) t d ? 35 ns rise time t r ? 35 storage time (v cc = 3.0 vdc, i c = 10 madc, i b1 = i b2 = 1.0 madc) t s ? 200 ns fall time t f ? 50 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors
mmbt3904l, smmbt3904l www. onsemi.com 3 typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turn ?on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2
mmbt3904l, smmbt3904l www. onsemi.com 4 typical audio small? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4
mmbt3904l, smmbt3904l www. onsemi.com 5 typical static characteristics figure 15. dc current gain i c , collector current (ma) 10 100 1000 0.1 h , dc current gain 10 1 100 1.0 1000 fe v ce = 1.0 v t j = +150 c +25 c -55 c figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma
mmbt3904l, smmbt3904l www. onsemi.com 6 figure 17. collector emitter saturation voltage vs. collector current figure 18. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 19. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 0.5 i c /i b = 10 150 c 25 c ?55 c i c /i b = 10 150 c 25 c ?55 c v ce = 1 v 150 c 25 c ?55 c figure 20. temperature coefficients i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms figure 21. current gain bandwidth vs. collector current i c , collector current (ma) 1000 100 10 1 0.1 10 100 1000 f t , current?gain?bandwidth product (mhz) v ce = 1 v t a = 25 c figure 22. safe operating area
mmbt3904l, smmbt3904l www. onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt3904lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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